Toshiba Semiconductor and Storage
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TK35E08N1,S1X
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TK35E08N1,S1X

MOSFET N-CH 80V 55A TO-220
Broj dijela
TK35E08N1,S1X
Proizvođač/Marka
Toshiba Semiconductor and Storage
Niz
U-MOSVIII-H
Status dijela
Active
Pakiranje
Tube
Tehnologija
MOSFET (Metal Oxide)
Radna temperatura
150°C (TJ)
Vrsta montaže
Through Hole
Paket/kovčeg
TO-220-3
Paket uređaja dobavljača
TO-220
Rasipanje snage (maks.)
72W (Tc)
Tip FET-a
N-Channel
FET značajka
-
Napon odvoda prema izvoru (Vdss)
80V
Struja - Kontinuirani odvod (Id) @ 25�C
55A (Tc)
Rds uključen (maks.) @ Id, Vgs
12.2 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
4V @ 300µA
Punjenje vrata (Qg) (maks.) @ Vgs
25nC @ 10V
Ulazni kapacitet (Ciss) (maks.) @ Vds
1700pF @ 40V
Pogonski napon (maks. Rds uključen, min. Rds uključen)
10V
Vgs (maks.)
±20V
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Ključne riječi od TK35E08N1,S1X
TK35E08N1,S1X Elektroničke komponente
TK35E08N1,S1X Prodajni
TK35E08N1,S1X Dobavljač
TK35E08N1,S1X Distributer
TK35E08N1,S1X Tablica podataka
TK35E08N1,S1X Fotografije
TK35E08N1,S1X Cijena
TK35E08N1,S1X Ponuda
TK35E08N1,S1X Najniža cijena
TK35E08N1,S1X Pretraživanje
TK35E08N1,S1X Kupnja
TK35E08N1,S1X Čip