Toshiba Semiconductor and Storage
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TK12E80W,S1X
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TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220
Broj dijela
TK12E80W,S1X
Proizvođač/Marka
Toshiba Semiconductor and Storage
Niz
DTMOSIV
Status dijela
Active
Pakiranje
Tube
Tehnologija
MOSFET (Metal Oxide)
Radna temperatura
150°C
Vrsta montaže
Through Hole
Paket/kovčeg
TO-220-3
Paket uređaja dobavljača
TO-220
Rasipanje snage (maks.)
165W (Tc)
Tip FET-a
N-Channel
FET značajka
-
Napon odvoda prema izvoru (Vdss)
800V
Struja - Kontinuirani odvod (Id) @ 25�C
11.5A (Ta)
Rds uključen (maks.) @ Id, Vgs
450 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
4V @ 570µA
Punjenje vrata (Qg) (maks.) @ Vgs
23nC @ 10V
Ulazni kapacitet (Ciss) (maks.) @ Vds
1400pF @ 300V
Pogonski napon (maks. Rds uključen, min. Rds uključen)
10V
Vgs (maks.)
±20V
Zatražite ponudu
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Na lageru 22952 PCS
Podaci za kontakt
Srodni proizvodi
TK1205800000G 500 TB WIR PRO 180D SOL
TK1205800000G
500 TB WIR PRO 180D SOL
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Ključne riječi od TK12E80W,S1X
TK12E80W,S1X Elektroničke komponente
TK12E80W,S1X Prodajni
TK12E80W,S1X Dobavljač
TK12E80W,S1X Distributer
TK12E80W,S1X Tablica podataka
TK12E80W,S1X Fotografije
TK12E80W,S1X Cijena
TK12E80W,S1X Ponuda
TK12E80W,S1X Najniža cijena
TK12E80W,S1X Pretraživanje
TK12E80W,S1X Kupnja
TK12E80W,S1X Čip