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NCP5181DR2G
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NCP5181DR2G

IC MOSFET DRVR HIGH VOLT 8-SOIC
Broj dijela
NCP5181DR2G
Proizvođač/Marka
ON Semiconductor
Niz
-
Status dijela
Active
Pakiranje
Tape & Reel (TR)
Vrsta unosa
Non-Inverting
Radna temperatura
-40°C ~ 150°C (TJ)
Vrsta montaže
Surface Mount
Paket/kovčeg
8-SOIC (0.154", 3.90mm Width)
Paket uređaja dobavljača
8-SOIC
Napon - opskrba
10 V ~ 20 V
Vrsta kanala
Independent
Vođena konfiguracija
Half-Bridge
Broj vozača
2
Vrsta vrata
N-Channel MOSFET
Logički napon - VIL, VIH
0.8V, 2.3V
Struja - vršni izlaz (izvor, odvod)
1.4A, 2.2A
Visoki bočni napon - Max (bootstrap)
600V
Vrijeme porasta / pada (tipično)
40ns, 20ns
Zatražite ponudu
Ispunite sva potrebna polja i kliknite "POŠALJI", kontaktirat ćemo vas u roku od 12 sati putem e-pošte. Ako imate bilo kakvih problema, ostavite poruke ili e-poštu na [email protected], odgovorit ćemo u najkraćem mogućem roku.
Na lageru 11331 PCS
Podaci za kontakt
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Ključne riječi od NCP5181DR2G
NCP5181DR2G Elektroničke komponente
NCP5181DR2G Prodajni
NCP5181DR2G Dobavljač
NCP5181DR2G Distributer
NCP5181DR2G Tablica podataka
NCP5181DR2G Fotografije
NCP5181DR2G Cijena
NCP5181DR2G Ponuda
NCP5181DR2G Najniža cijena
NCP5181DR2G Pretraživanje
NCP5181DR2G Kupnja
NCP5181DR2G Čip