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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Broj dijela
NCP5106BDR2G
Kategorija
Power Chip > Gate Driver IC
Proizvođač/Marka
onsemi (Ansemi)
Enkapsulacija
SOIC-8-150mil
Pakiranje
taping
Broj paketa
2500
Opis
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Na lageru 75348 PCS
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Ključne riječi od NCP5106BDR2G
NCP5106BDR2G Elektroničke komponente
NCP5106BDR2G Prodajni
NCP5106BDR2G Dobavljač
NCP5106BDR2G Distributer
NCP5106BDR2G Tablica podataka
NCP5106BDR2G Fotografije
NCP5106BDR2G Cijena
NCP5106BDR2G Ponuda
NCP5106BDR2G Najniža cijena
NCP5106BDR2G Pretraživanje
NCP5106BDR2G Kupnja
NCP5106BDR2G Čip