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SI3499DV-T1-GE3

SI3499DV-T1-GE3

Product Overview

Category

The SI3499DV-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI3499DV-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.5A
  • On-Resistance (RDS(on)): 0.022 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SI3499DV-T1-GE3 features the following pin configuration: 1. Gate (G) 2. Source (S) 3. Drain (D) 4. N/C 5. N/C 6. Source (S) 7. Drain (D) 8. Gate (G)

Functional Features

  • Low on-resistance for minimal power loss
  • Enhanced thermal performance for improved reliability
  • Robust construction for durability in harsh environments
  • ESD protection for increased ruggedness

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact form factor
  • Reliable performance
  • Wide operating voltage range

Disadvantages

  • Sensitive to static electricity
  • Limited maximum current handling compared to some higher-power MOSFETs

Working Principles

The SI3499DV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This MOSFET is well-suited for a wide range of applications including: - DC-DC converters - Load switches - Battery management systems - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the SI3499DV-T1-GE3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI4410DY-T1-GE3

In conclusion, the SI3499DV-T1-GE3 power MOSFET offers high performance and reliability in power management applications, making it a versatile choice for various electronic systems.

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Navedite 10 uobičajenih pitanja i odgovora vezanih uz primjenu SI3499DV-T1-GE3 u tehničkim rješenjima

  1. What is the maximum voltage rating for SI3499DV-T1-GE3?

    • The maximum voltage rating for SI3499DV-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI3499DV-T1-GE3?

    • The typical on-resistance of SI3499DV-T1-GE3 is 12mΩ.
  3. What is the maximum continuous drain current for SI3499DV-T1-GE3?

    • The maximum continuous drain current for SI3499DV-T1-GE3 is 15A.
  4. What is the gate threshold voltage for SI3499DV-T1-GE3?

    • The gate threshold voltage for SI3499DV-T1-GE3 is typically 1V.
  5. What is the operating temperature range for SI3499DV-T1-GE3?

    • The operating temperature range for SI3499DV-T1-GE3 is -55°C to 150°C.
  6. Is SI3499DV-T1-GE3 suitable for automotive applications?

    • Yes, SI3499DV-T1-GE3 is suitable for automotive applications.
  7. Does SI3499DV-T1-GE3 have built-in ESD protection?

    • Yes, SI3499DV-T1-GE3 has built-in ESD protection.
  8. What is the package type for SI3499DV-T1-GE3?

    • SI3499DV-T1-GE3 comes in a PowerPAK® SO-8 package.
  9. Can SI3499DV-T1-GE3 be used in power management applications?

    • Yes, SI3499DV-T1-GE3 can be used in power management applications.
  10. Is SI3499DV-T1-GE3 RoHS compliant?

    • Yes, SI3499DV-T1-GE3 is RoHS compliant.