2SB1238TV2R
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and low distortion - Package: TO-92, SOT-89, or similar - Essence: A semiconductor device used for amplifying or switching electronic signals - Packaging/Quantity: Typically available in reels or tubes containing hundreds to thousands of units
Specifications: - Type: PNP - Maximum Collector Current (Ic): 1A - Maximum Collector-Emitter Voltage (Vce): 120V - Power Dissipation (Pd): 0.625W - Transition Frequency (ft): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Collector (C): Pin 1 - Base (B): Pin 2 - Emitter (E): Pin 3
Functional Features: - High current gain for amplification applications - Low noise and distortion for high-fidelity audio amplifiers - Fast switching speed for digital circuit applications
Advantages: - Versatile applications in audio amplifiers, power supplies, and signal processing circuits - Reliable performance in various operating conditions - Compact package for space-constrained designs
Disadvantages: - Limited power dissipation capability compared to power transistors - Susceptible to thermal runaway if not properly biased and heatsinked
Working Principles: The 2SB1238TV2R operates based on the principles of minority carrier injection and control of current flow through the base-emitter junction. In amplification mode, small changes in the base current result in larger variations in the collector current, enabling signal amplification.
Detailed Application Field Plans: - Audio Amplifiers: Utilized as output transistors in audio amplifiers due to low distortion and high current gain. - Switching Circuits: Employed in digital logic gates and signal switching circuits due to fast switching speed. - Power Supplies: Used in linear voltage regulators and DC-DC converters for voltage regulation and power control.
Detailed and Complete Alternative Models: - 2N3906: Similar PNP BJT with lower power dissipation but compatible pinout - BC557: Another PNP BJT with comparable characteristics and pin configuration
This comprehensive entry provides a detailed understanding of the 2SB1238TV2R transistor, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
What is the maximum collector current of 2SB1238TV2R?
What is the maximum collector-emitter voltage of 2SB1238TV2R?
What is the power dissipation of 2SB1238TV2R?
What are the typical applications of 2SB1238TV2R?
What is the gain (hFE) of 2SB1238TV2R?
Is 2SB1238TV2R suitable for switching applications?
What is the operating temperature range of 2SB1238TV2R?
Does 2SB1238TV2R require a heat sink for certain applications?
Can 2SB1238TV2R be used in automotive electronics?
Are there any recommended alternative transistors to 2SB1238TV2R?