The DTC114EM3T5G is a versatile NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The DTC114EM3T5G features a SOT-723 package with the following pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)
The DTC114EM3T5G operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals. This allows the transistor to act as a switch or amplify signals in electronic circuits.
The DTC114EM3T5G is suitable for various applications, including: - Switching circuits - Amplifier circuits - Signal processing circuits - Oscillator circuits - Voltage regulation circuits
Some alternative models to the DTC114EM3T5G include: - BC547 - 2N2222 - 2N3904 - S8050 - SS8050
In summary, the DTC114EM3T5G is a compact and versatile NPN transistor with excellent characteristics for general-purpose switching and amplification applications. Its small package size, high current gain, and low power dissipation make it suitable for a wide range of electronic designs.
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What is the maximum continuous collector current of DTC114EM3T5G?
What is the typical collector-emitter saturation voltage of DTC114EM3T5G?
What is the maximum power dissipation of DTC114EM3T5G?
What is the hFE (DC current gain) range of DTC114EM3T5G?
What are the typical applications of DTC114EM3T5G?
What is the maximum operating temperature of DTC114EM3T5G?
Does DTC114EM3T5G have built-in protection features?
What is the recommended biasing configuration for DTC114EM3T5G?
Can DTC114EM3T5G be used in high-frequency applications?
Is DTC114EM3T5G RoHS compliant?