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MT29F32G08CFACBWP-12:C

MT29F32G08CFACBWP-12:C

Product Overview

Category

The MT29F32G08CFACBWP-12:C belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F32G08CFACBWP-12:C offers a storage capacity of 32 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With a read speed of up to 100 megabytes per second (MB/s) and a write speed of up to 50 MB/s, this chip ensures efficient data transfer.
  • Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
  • Compact package: The MT29F32G08CFACBWP-12:C comes in a small form factor package, making it suitable for integration into compact electronic devices.
  • RoHS compliant: This chip adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT29F32G08CFACBWP-12:C is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 32 GB
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Organization: 4,096 pages x 2,112 blocks x 128K bytes
  • Operating Temperature: -40°C to +85°C
  • Package Type: 48-ball VFBGA

Detailed Pin Configuration

The MT29F32G08CFACBWP-12:C has a 48-ball VFBGA package with the following pin configuration:

  1. VCC
  2. ALE
  3. CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. NC
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. GND

Functional Features

  • Page Read/Program/Erase: The MT29F32G08CFACBWP-12:C supports efficient read, program, and erase operations at the page level.
  • Block Management: It incorporates advanced block management algorithms to ensure optimal utilization of memory blocks and enhance overall performance.
  • Error Correction Code (ECC): This chip employs ECC techniques to detect and correct errors, ensuring data integrity.
  • Wear Leveling: The product implements wear leveling algorithms to distribute write operations evenly across memory cells, prolonging the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for extensive data storage.
  • Fast data transfer rate ensures efficient data handling.
  • Reliable performance ensures data integrity and longevity.
  • Compact package facilitates integration into various electronic devices.
  • RoHS compliance ensures environmental friendliness.

Disadvantages

  • Limited compatibility with certain legacy systems that do not support NAND flash memory.

Working Principles

The MT29F32G08CFACBWP-12:C operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is written and read by applying voltage to specific memory cells within the chip. Erasing of data is performed at the block level, where entire blocks of memory cells are cleared simultaneously.

Detailed Application Field Plans

The MT29F32G08CFACBWP-12:C finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F32G08CBACAWP-12IT:C
  2. MT29F32G08CBACAWP-12:C
  3. MT29F32G08CB

Navedite 10 uobičajenih pitanja i odgovora vezanih uz primjenu MT29F32G08CFACBWP-12:C u tehničkim rješenjima

  1. Question: What is the capacity of the MT29F32G08CFACBWP-12:C memory chip?
    Answer: The MT29F32G08CFACBWP-12:C has a capacity of 32 gigabits (4 gigabytes).

  2. Question: What is the operating voltage range for this memory chip?
    Answer: The operating voltage range for the MT29F32G08CFACBWP-12:C is typically between 2.7V and 3.6V.

  3. Question: What is the maximum clock frequency supported by this memory chip?
    Answer: The MT29F32G08CFACBWP-12:C supports a maximum clock frequency of 100 MHz.

  4. Question: Does this memory chip support random access or sequential access?
    Answer: The MT29F32G08CFACBWP-12:C supports random access, allowing for efficient read and write operations.

  5. Question: What is the page size of this memory chip?
    Answer: The MT29F32G08CFACBWP-12:C has a page size of 8 kilobytes.

  6. Question: Can this memory chip be used in automotive applications?
    Answer: Yes, the MT29F32G08CFACBWP-12:C is designed to meet the requirements of automotive applications.

  7. Question: Is this memory chip compatible with standard NAND flash interfaces?
    Answer: Yes, the MT29F32G08CFACBWP-12:C is compatible with standard NAND flash interfaces, making it easy to integrate into existing systems.

  8. Question: What is the endurance rating of this memory chip?
    Answer: The MT29F32G08CFACBWP-12:C has an endurance rating of 10,000 program/erase cycles.

  9. Question: Does this memory chip support hardware data protection features?
    Answer: Yes, the MT29F32G08CFACBWP-12:C supports hardware data protection features such as block locking and password protection.

  10. Question: What is the temperature range for reliable operation of this memory chip?
    Answer: The MT29F32G08CFACBWP-12:C is designed to operate reliably in a temperature range of -40°C to +85°C.