MT29F1G16ABBDAH4-ITX:D

Product Overview

Category

MT29F1G16ABBDAH4-ITX:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G16ABBDAH4-ITX:D offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Compact package: The MT29F1G16ABBDAH4-ITX:D comes in a compact form factor, ensuring easy integration into various electronic devices.
• Durable design: This NAND flash memory is built to withstand harsh environmental conditions, ensuring data integrity and longevity.

Packaging/Quantity

The MT29F1G16ABBDAH4-ITX:D is typically packaged in a small surface-mount package. It is available in different quantities depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The MT29F1G16ABBDAH4-ITX:D has a total of 48 pins. Here is a detailed pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CLE - Command latch enable
5. ALE - Address latch enable
6. RE# - Read enable
7. WE# - Write enable
8. WP# - Write protect
9. R/B# - Ready/Busy status
10. CE# - Chip enable
11. DQ0-DQ15 - Data input/output

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• Page Program Operation: The MT29F1G16ABBDAH4-ITX:D supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This NAND flash memory enables block erase operations, which erase a large amount of data simultaneously.
• Random Access: The product allows random access to any location within the memory array, facilitating efficient data retrieval.
• Error Correction Code (ECC): ECC functionality is integrated into the MT29F1G16ABBDAH4-ITX:D, ensuring data integrity and reliability.
• Wear-Leveling: The NAND flash memory incorporates wear-leveling algorithms to distribute write operations evenly across memory blocks, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact form factor
• Durable design

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may limit its lifespan.
• Higher cost per bit compared to other types of memory.

Working Principles

The MT29F1G16ABBDAH4-ITX:D utilizes NAND flash technology, which stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing involves applying a high voltage to the control gate, which modifies the charge on the floating gate.

Detailed Application Field Plans

The MT29F1G16ABBDAH4-ITX:D finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-ITX:D
• MT29F2G08ABAEAWP-ITX:D
• MT29F4G08ABAFWP-ITX:D
• MT29F8G08ABACAWP-ITX:D
• MT29F16G08ABAAWP-ITX:D

(Note: The above list includes only a few alternative models for reference.)

In conclusion, the MT29F1G16ABBDAH4-ITX:D is a NAND flash memory