M29W640GL70ZS6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Model: M29W640GL70ZS6E
• Memory Capacity: 64 Megabits (8 Megabytes)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 nanoseconds
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The M29W640GL70ZS6E flash memory chip has the following pin configuration:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/ACC (Reset/Access Protection)
8. BYTE# (Byte/Word Organization Selection)
9. RY/BY# (Ready/Busy Status Output)
10. VSS (Ground)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• Fast Read and Write Operations: The M29W640GL70ZS6E offers high-speed data access, allowing for quick reading and writing of information.
• Reliable Data Retention: The flash memory chip ensures data integrity and retention even in harsh environmental conditions.
• Low Power Consumption: Designed to minimize power consumption, making it suitable for battery-powered devices.
• High-Density Storage: With a capacity of 64 Megabits, the chip provides ample storage space for various applications.

Advantages and Disadvantages

Advantages: - High-speed data access - Reliable data retention - Low power consumption - Large storage capacity

Disadvantages: - Limited endurance (finite number of erase/write cycles) - Higher cost compared to other memory technologies

Working Principles

The M29W640GL70ZS6E flash memory operates based on the principles of floating-gate transistors. It utilizes electrically erasable programmable read-only memory (EEPROM) technology, allowing for non-volatile storage of data. The chip uses a parallel interface to communicate with the host device, enabling fast data transfer.

Detailed Application Field Plans

The M29W640GL70ZS6E flash memory chip finds application in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Its high-density storage capacity, fast access times, and low power consumption make it suitable for these applications, where reliable and efficient data storage is crucial.

Detailed and Complete Alternative Models

1. M29W640GL70N6E
2. M29W640GL70ZA6E
3. M29W640GL70NB6E
4. M29W640GL70ZB6E

(Note: The list above includes only a few alternative models. There are several other variations available in the market.)

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