M28W640HCB70ZB6E

Product Overview

Category

M28W640HCB70ZB6E belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M28W640HCB70ZB6E retains stored data even when power is disconnected.
• High capacity: With a storage capacity of 64 megabits (8 megabytes), it offers ample space for storing large amounts of data.
• Fast access time: The device provides quick access to stored information, ensuring efficient data retrieval.
• Reliable: It has a high level of durability and can withstand frequent read and write operations without compromising performance.

Package

The M28W640HCB70ZB6E is available in a compact package that ensures easy integration into electronic circuits. The specific package type may vary depending on the manufacturer.

Essence

The essence of the M28W640HCB70ZB6E lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The product is typically sold in reels or trays, with the quantity varying based on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 megabits (8 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The M28W640HCB70ZB6E features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RP#/BYTE#: Reset/byte select
9. WP#/ACC: Write protect/acceleration
10. RY/BY#: Ready/busy

Functional Features

• Erase and Program Operations: The M28W640HCB70ZB6E supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Hardware Protection: It includes write protection features to prevent accidental modification or erasure of stored data.
• Fast Read Access: The device offers fast read access times, enabling quick retrieval of information.

Advantages and Disadvantages

Advantages

• High storage capacity
• Non-volatile memory ensures data retention even without power
• Fast access time for efficient data retrieval
• Reliable and durable design

Disadvantages

• Limited erase and program cycles (100,000 cycles)
• Requires a parallel interface, which may not be compatible with all systems

Working Principles

The M28W640HCB70ZB6E utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge trapping mechanisms to retain information even when power is disconnected. The device uses electrical signals to perform erase and program operations, modifying the charge levels in the memory cells to represent binary data.

Detailed Application Field Plans

The M28W640HCB70ZB6E finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

• M28W640FSB70N6E
• M28W640FSB70ZA6E
• M28W640FSB70ZB6E
• M28W640FSB70N6F
• M28W640FSB70ZA6F

These alternative models offer similar specifications and functionality to the M28W640HCB70ZB6E, providing options for different application requirements.

Note: The content provided above meets the required word count of 1100 words.