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JS28F640P30BF75D

JS28F640P30BF75D

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory technology for long-term data storage
  • Packaging/Quantity: Available in various packaging options (e.g., surface mount) with quantity per package varying based on manufacturer specifications.

Specifications

  • Capacity: 64 Megabits (8 Megabytes)
  • Interface: Parallel
  • Voltage: 2.7V - 3.6V
  • Access Time: 70 ns
  • Operating Temperature: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: Up to 20 years

Pin Configuration (Detailed)

The JS28F640P30BF75D flash memory IC has a total of 48 pins. The pin configuration is as follows:

  1. VPP: Programming Voltage Supply
  2. A0-A18: Address Inputs
  3. DQ0-DQ15: Data Input/Output
  4. WE#: Write Enable
  5. CE#: Chip Enable
  6. OE#: Output Enable
  7. RP#/BYTE#: Reset/Byte#
  8. RY/BY#: Ready/Busy#
  9. WP#/ACC: Write Protect/Accumulator
  10. VCC: Power Supply
  11. GND: Ground

(Note: This is a simplified representation. Please refer to the datasheet for the complete pin configuration.)

Functional Features

  • High-speed read and write operations
  • Efficient programming and erasing mechanisms
  • Reliable data retention even in harsh environmental conditions
  • Low power consumption
  • Built-in error correction mechanisms
  • Support for various interface protocols

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory (data retention even without power) - Wide operating temperature range - High endurance (program/erase cycles)

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited write endurance compared to some newer memory technologies - Requires additional circuitry for interfacing with the host system

Working Principles

The JS28F640P30BF75D flash memory utilizes a floating gate transistor structure to store data. It employs a combination of electric fields and charge trapping techniques to retain information even when power is removed. The memory cells are organized in a grid-like array, with each cell capable of storing one or more bits of data. When programming or erasing, voltage pulses are applied to specific cells to modify their charge levels, representing the desired data.

Detailed Application Field Plans

The JS28F640P30BF75D flash memory finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics (e.g., digital cameras, smartphones)

Alternative Models (Detailed and Complete)

  • JS28F640P33BFE: Similar specifications, different package type
  • JS28F640P33BFD: Similar specifications, different package type
  • JS28F640P33BFA: Similar specifications, different package type
  • JS28F640P33BFB: Similar specifications, different package type

(Note: This is a sample list. Please refer to the manufacturer's documentation for a complete list of alternative models.)

This entry provides an overview of the JS28F640P30BF75D flash memory, including its product category, use, characteristics, package details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Navedite 10 uobičajenih pitanja i odgovora vezanih uz primjenu JS28F640P30BF75D u tehničkim rješenjima

Sure! Here are 10 common questions and answers related to the application of JS28F640P30BF75D in technical solutions:

  1. Q: What is JS28F640P30BF75D? A: JS28F640P30BF75D is a specific model of flash memory chip manufactured by Intel.

  2. Q: What is the capacity of JS28F640P30BF75D? A: JS28F640P30BF75D has a capacity of 64 megabytes (MB).

  3. Q: What is the interface used for connecting JS28F640P30BF75D to a microcontroller or processor? A: JS28F640P30BF75D uses a parallel interface for communication with the host device.

  4. Q: What is the operating voltage range of JS28F640P30BF75D? A: JS28F640P30BF75D operates within a voltage range of 2.7V to 3.6V.

  5. Q: Can JS28F640P30BF75D be used in industrial applications? A: Yes, JS28F640P30BF75D is suitable for use in various industrial applications due to its reliability and durability.

  6. Q: Does JS28F640P30BF75D support wear-leveling algorithms? A: Yes, JS28F640P30BF75D supports wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.

  7. Q: What is the maximum data transfer rate of JS28F640P30BF75D? A: JS28F640P30BF75D has a maximum data transfer rate of 75 megabytes per second (MB/s).

  8. Q: Is JS28F640P30BF75D compatible with various operating systems? A: Yes, JS28F640P30BF75D is compatible with different operating systems, including Windows, Linux, and embedded systems.

  9. Q: Can JS28F640P30BF75D be used in automotive applications? A: Yes, JS28F640P30BF75D is designed to meet the requirements of automotive applications, such as infotainment systems and instrument clusters.

  10. Q: Does JS28F640P30BF75D have built-in error correction capabilities? A: Yes, JS28F640P30BF75D incorporates error correction code (ECC) algorithms to detect and correct data errors during read/write operations.

Please note that the answers provided here are general and may vary depending on specific implementation details and requirements.