PL102-10TI-R

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Transistor
Packaging/Quantity: Bulk Packaging, 1000 units per pack

Specifications

• Maximum Collector Current: 100mA
• Maximum Collector-Emitter Voltage: 30V
• Maximum Power Dissipation: 300mW
• Transition Frequency: 250MHz
• Noise Figure: 2dB
• Gain Bandwidth Product: 200MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The PL102-10TI-R transistor has three pins:

1. Base (B): Used for input signal connection.
2. Emitter (E): Connected to the ground or reference voltage.
3. Collector (C): Output terminal for amplified signal.

Functional Features

• High Gain: The PL102-10TI-R offers a high voltage gain, making it suitable for amplifying weak signals.
• Low Noise: With a low noise figure of 2dB, this transistor minimizes unwanted noise during signal amplification.
• Wide Frequency Response: The transition frequency of 250MHz and gain bandwidth product of 200MHz enable the transistor to handle a broad range of frequencies.
• Compact Package: The TO-92 package provides a compact and easy-to-mount solution for various electronic circuits.

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification. - Low noise figure ensures minimal distortion in the amplified signal. - Wide frequency response makes it versatile for different applications. - Compact package facilitates easy integration into circuit designs.

Disadvantages: - Limited maximum collector current may restrict its use in high-power applications. - Relatively low maximum collector-emitter voltage limits its suitability for certain voltage levels.

Working Principles

The PL102-10TI-R is a bipolar junction transistor (BJT) that operates based on the principles of amplification and control of electric current. It consists of three layers: the emitter, base, and collector. By applying a small input current to the base terminal, the transistor allows a larger current to flow from the collector to the emitter. This amplification process enables the transistor to boost weak signals to a usable level.

Detailed Application Field Plans

The PL102-10TI-R transistor finds applications in various electronic circuits where signal amplification is required. Some common application fields include:

1. Audio Amplifiers: The high gain and low noise characteristics make it suitable for audio amplification in devices such as headphones, speakers, and audio receivers.
2. RF Communication Systems: With its wide frequency response, the transistor can be used in radio frequency (RF) communication systems for amplifying signals in transmitters and receivers.
3. Sensor Interfaces: The PL102-10TI-R can be employed in sensor interface circuits to amplify weak signals from sensors like temperature, pressure, or light sensors.
4. Oscillators: It can also be utilized in oscillator circuits to generate stable oscillations at specific frequencies.

Detailed and Complete Alternative Models

1. PL103-20TI-R: Similar to PL102-10TI-R but with higher maximum collector current (200mA).
2. PL101-5TI-R: Lower power version with reduced maximum power dissipation (100mW).
3. PL104-30TI-R: Higher voltage variant with an increased maximum collector-emitter voltage (40V).

These alternative models provide options with varying specifications to suit different requirements within the same product category.

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