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2N6504G
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2N6504G - Semiconductor Transistor

Product Overview

Category:

The 2N6504G is a semiconductor transistor belonging to the category of NPN bipolar junction transistors (BJT).

Use:

It is commonly used for amplification and switching of electronic signals in various applications.

Characteristics:

  • High current gain
  • Low saturation voltage
  • Medium power dissipation
  • Fast switching speed

Package:

The 2N6504G is typically available in a TO-220 package, which provides efficient heat dissipation and mechanical strength.

Essence:

This transistor is essential for controlling and amplifying electrical signals in electronic circuits.

Packaging/Quantity:

The 2N6504G is usually supplied in reels or tubes, with quantities varying based on manufacturer and distributor specifications.

Specifications

  • Collector-Emitter Voltage (VCEO): 40V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 7A
  • Power Dissipation (PD): 40W
  • Transition Frequency (fT): 30MHz

Detailed Pin Configuration

The 2N6504G transistor has three pins: the emitter, base, and collector. The pin configuration is as follows: - Emitter (E) - Pin 1 - Base (B) - Pin 2 - Collector (C) - Pin 3

Functional Features

  • High current amplification capability
  • Fast switching speed
  • Low power dissipation
  • Reliable performance over a wide temperature range

Advantages and Disadvantages

Advantages

  • High current gain
  • Low saturation voltage
  • Versatile applications in amplification and switching circuits

Disadvantages

  • Moderate power dissipation limit
  • Limited frequency response compared to high-frequency transistors

Working Principles

The 2N6504G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal, resulting in amplified output at the collector terminal.

Detailed Application Field Plans

Amplification Circuits

The 2N6504G is widely used in audio and RF amplification circuits due to its high current gain and low saturation voltage characteristics.

Switching Circuits

In electronic switching applications, this transistor effectively controls the flow of current, making it suitable for use in power supplies and motor control circuits.

Detailed and Complete Alternative Models

  • 2N4401
  • BC547
  • 2N2222
  • BC337

In conclusion, the 2N6504G semiconductor transistor offers reliable performance in amplification and switching applications, making it a versatile component in electronic circuit design.

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Navedite 10 uobičajenih pitanja i odgovora vezanih uz primjenu 2N6504G u tehničkim rješenjima

  1. What is the 2N6504G transistor used for?

    • The 2N6504G is a general-purpose NPN bipolar junction transistor commonly used for amplification and switching applications.

  2. What are the typical operating conditions for the 2N6504G?

    • The 2N6504G typically operates at a maximum collector-emitter voltage of 40V and a maximum collector current of 600mA.

  3. How do I determine the pinout of the 2N6504G transistor?

    • The pinout of the 2N6504G transistor is typically Emitter (E), Base (B), and Collector (C).

  4. Can the 2N6504G be used for audio amplification?

    • Yes, the 2N6504G can be used for small-signal audio amplification in low-power applications.

  5. What are some common circuit configurations using the 2N6504G?

    • Common circuit configurations include common emitter, common base, and common collector configurations for various amplification and switching purposes.

  6. What are the thermal considerations for the 2N6504G?

    • The 2N6504G has a maximum junction temperature of 150°C and requires proper heat sinking to ensure reliable operation.

  7. Can the 2N6504G be used for driving relays or motors?

    • Yes, the 2N6504G can be used to drive small relays and low-power DC motors when appropriately interfaced with protective diodes.

  8. What are the key parameters to consider when designing a circuit with the 2N6504G?

    • Key parameters include the maximum collector current, gain bandwidth product, and power dissipation to ensure proper performance and reliability.

  9. Are there any common failure modes associated with the 2N6504G?

    • Common failure modes include thermal runaway due to inadequate heat sinking and overvoltage breakdown if not properly protected in the circuit.

  10. Where can I find detailed datasheets and application notes for the 2N6504G?

    • Detailed datasheets and application notes for the 2N6504G can be found on semiconductor manufacturer websites or distributor platforms.