IS66WVE2M16EBLL-55BLI

Product Overview

Category

IS66WVE2M16EBLL-55BLI belongs to the category of memory products.

Use

It is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Reliable performance

Package

IS66WVE2M16EBLL-55BLI comes in a compact package that ensures easy integration into electronic circuits.

Essence

The essence of IS66WVE2M16EBLL-55BLI lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

Each package of IS66WVE2M16EBLL-55BLI contains a single unit of the memory product.

Specifications

• Model: IS66WVE2M16EBLL-55BLI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 2 Megabits (2M x 16 bits)
• Operating Voltage: 3.3V
• Speed: 55 nanoseconds (ns)
• Interface: Parallel
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The pin configuration of IS66WVE2M16EBLL-55BLI is as follows:

1. VCC
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. /WE (Write Enable)
19. /OE (Output Enable)
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CE (Chip Enable)
37. /UB (Upper Byte)
38. /LB (Lower Byte)
39. NC (No Connection)
40. GND

Functional Features

IS66WVE2M16EBLL-55BLI offers the following functional features:

• Random access to stored data
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into electronic circuits
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast data access speed enables quick retrieval of information.
• Low power consumption helps conserve energy in electronic devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternative memory options.
• Requires additional circuitry for interfacing with other components.

Working Principles

IS66WVE2M16EBLL-55BLI operates based on the principles of static random access memory (SRAM). It stores digital information using a network of flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS66WVE2M16EBLL-55BLI finds applications in various electronic devices, including but not limited to:

1. Computer systems
2. Networking equipment
3. Communication devices
4. Industrial control systems
5. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WVE2M16EBLL-55BLI include:

1. IS66WVE2M16EBLL-70BLI
2. IS66WVE2M16EBLL-45BLI
3. IS66WVE2M16EBLL-25BLI
4. IS66WVE2M16EBLL-80BLI
5. IS66WVE2M16EBLL-60BLI

These alternative models provide different speed, voltage, or capacity options to suit specific application requirements.

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