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IS66WVE2M16EBLL-55BLI

IS66WVE2M16EBLL-55BLI

Product Overview

Category

IS66WVE2M16EBLL-55BLI belongs to the category of memory products.

Use

It is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

  • High storage capacity
  • Fast data access speed
  • Low power consumption
  • Reliable performance

Package

IS66WVE2M16EBLL-55BLI comes in a compact package that ensures easy integration into electronic circuits.

Essence

The essence of IS66WVE2M16EBLL-55BLI lies in its ability to provide efficient and reliable memory storage for electronic devices.

Packaging/Quantity

Each package of IS66WVE2M16EBLL-55BLI contains a single unit of the memory product.

Specifications

  • Model: IS66WVE2M16EBLL-55BLI
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 2 Megabits (2M x 16 bits)
  • Operating Voltage: 3.3V
  • Speed: 55 nanoseconds (ns)
  • Interface: Parallel
  • Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The pin configuration of IS66WVE2M16EBLL-55BLI is as follows:

  1. VCC
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. /WE (Write Enable)
  19. /OE (Output Enable)
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. /CE (Chip Enable)
  37. /UB (Upper Byte)
  38. /LB (Lower Byte)
  39. NC (No Connection)
  40. GND

Functional Features

IS66WVE2M16EBLL-55BLI offers the following functional features:

  • Random access to stored data
  • High-speed read and write operations
  • Low power consumption in standby mode
  • Easy integration into electronic circuits
  • Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

  • High storage capacity allows for storing large amounts of data.
  • Fast data access speed enables quick retrieval of information.
  • Low power consumption helps conserve energy in electronic devices.
  • Reliable performance ensures data integrity and system stability.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per unit compared to some alternative memory options.
  • Requires additional circuitry for interfacing with other components.

Working Principles

IS66WVE2M16EBLL-55BLI operates based on the principles of static random access memory (SRAM). It stores digital information using a network of flip-flops, which retain their state as long as power is supplied. The stored data can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

IS66WVE2M16EBLL-55BLI finds applications in various electronic devices, including but not limited to:

  1. Computer systems
  2. Networking equipment
  3. Communication devices
  4. Industrial control systems
  5. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS66WVE2M16EBLL-55BLI include:

  1. IS66WVE2M16EBLL-70BLI
  2. IS66WVE2M16EBLL-45BLI
  3. IS66WVE2M16EBLL-25BLI
  4. IS66WVE2M16EBLL-80BLI
  5. IS66WVE2M16EBLL-60BLI

These alternative models provide different speed, voltage, or capacity options to suit specific application requirements.

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Navedite 10 uobičajenih pitanja i odgovora vezanih uz primjenu IS66WVE2M16EBLL-55BLI u tehničkim rješenjima

Sure! Here are 10 common questions and answers related to the application of IS66WVE2M16EBLL-55BLI in technical solutions:

  1. Question: What is IS66WVE2M16EBLL-55BLI?
    Answer: IS66WVE2M16EBLL-55BLI is a specific type of memory chip commonly used in technical solutions.

  2. Question: What is the capacity of IS66WVE2M16EBLL-55BLI?
    Answer: The IS66WVE2M16EBLL-55BLI has a capacity of 16 megabits (2 megabytes).

  3. Question: What is the operating voltage range for IS66WVE2M16EBLL-55BLI?
    Answer: The operating voltage range for IS66WVE2M16EBLL-55BLI is typically between 2.7V and 3.6V.

  4. Question: What is the speed rating of IS66WVE2M16EBLL-55BLI?
    Answer: The speed rating of IS66WVE2M16EBLL-55BLI is 55 nanoseconds (ns).

  5. Question: What is the interface type of IS66WVE2M16EBLL-55BLI?
    Answer: IS66WVE2M16EBLL-55BLI uses a parallel interface with 16 data lines.

  6. Question: Can IS66WVE2M16EBLL-55BLI be used in industrial applications?
    Answer: Yes, IS66WVE2M16EBLL-55BLI is suitable for industrial applications due to its wide operating temperature range and reliability.

  7. Question: Is IS66WVE2M16EBLL-55BLI compatible with other memory chips?
    Answer: IS66WVE2M16EBLL-55BLI is compatible with other similar memory chips that use a parallel interface and have the same voltage requirements.

  8. Question: What are some typical applications of IS66WVE2M16EBLL-55BLI?
    Answer: IS66WVE2M16EBLL-55BLI is commonly used in embedded systems, telecommunications equipment, networking devices, and automotive electronics.

  9. Question: Can IS66WVE2M16EBLL-55BLI be used for code storage?
    Answer: Yes, IS66WVE2M16EBLL-55BLI can be used for storing program code as well as data in technical solutions.

  10. Question: Are there any special considerations when designing with IS66WVE2M16EBLL-55BLI?
    Answer: It is important to ensure proper power supply and signal integrity when designing with IS66WVE2M16EBLL-55BLI. Additionally, attention should be given to the timing requirements and voltage levels specified in the datasheet.