IS43DR82560C-25DBLI

Product Overview

Category

IS43DR82560C-25DBLI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Package

IS43DR82560C-25DBLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS43DR82560C-25DBLI lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: DDR4 SDRAM
• Capacity: 8 GB
• Speed: 2666 MHz
• Voltage: 1.2V
• Organization: 1G x 64
• Interface: 260-pin SO-DIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS43DR82560C-25DBLI is as follows:

1. VSS
2. DQ0
3. DQ1
4. VSS
5. DQ2
6. DQ3
7. VSS
8. DQ4
9. DQ5
10. VSS
11. DQ6
12. DQ7
13. VSS
14. DQ8
15. DQ9
16. VSS
17. DQ10
18. DQ11
19. VSS
20. DQ12
21. DQ13
22. VSS
23. DQ14
24. DQ15
25. VSS
26. A0
27. A1
28. VSS
29. A2
30. A3
31. VSS
32. A4
33. A5
34. VSS
35. A6
36. A7
37. VSS
38. A8
39. A9
40. VSS
41. A10
42. A11
43. VSS
44. A12
45. A13
46. VSS
47. A14
48. A15
49. VSS
50. BA0
51. BA1
52. VSS
53. RAS#
54. CAS#
55. WE#
56. VSS
57. CK
58. CKE
59. VSS
60. CS#
61. DM0
62. DM1
63. VSS
64. VDD

Functional Features

• High-speed data transfer rate
• Support for advanced memory technologies
• Low power consumption
• Error correction capabilities
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact size
• Wide temperature range operation
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to non-volatile memory

Working Principles

IS43DR82560C-25DBLI operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When data is required, it is accessed by reading the charge stored in the capacitors.

Detailed Application Field Plans

IS43DR82560C-25DBLI finds applications in various electronic devices, including but not limited to: - Laptops and desktop computers - Servers and data centers - Gaming consoles - Mobile phones and tablets - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS43DR82560C-25DBLI include: - IS43TR82560C-25DBLI - IS43DR82560C-25EBLI - IS43DR82560C-25FBLI - IS43DR82560C-25GBLI

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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