BC849CWH6327XTSA1

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: Small signal NPN transistor, low power, high current gain - Package: SOT323 (SC-70) package - Essence: Silicon NPN epitaxial planar transistors - Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications: - Collector-Base Voltage (VCBO): 45V - Collector-Emitter Voltage (VCEO): 30V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (Ptot): 250mW - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration: The BC849CWH6327XTSA1 transistor has three pins: 1. Emitter (E): Connected to the N-doped region of the transistor. 2. Base (B): Controls the transistor's conductivity when a small current is applied. 3. Collector (C): Collects the majority charge carriers.

Functional Features: - High current gain - Low noise - Small footprint - Suitable for high-speed switching applications

Advantages: - Small size - High current gain - Low power consumption - Wide operating temperature range

Disadvantages: - Limited power dissipation capability - Relatively low voltage ratings

Working Principles: The BC849CWH6327XTSA1 operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small current at the base terminal, allowing for amplification and switching functions in electronic circuits.

Detailed Application Field Plans: - Audio amplification - Signal processing circuits - Switching circuits - Oscillator circuits - Sensor interfaces

Detailed and Complete Alternative Models: 1. BC847C 2. BC850C 3. 2N3904 4. 2N2222A 5. 2N4401

This comprehensive entry provides an in-depth understanding of the BC849CWH6327XTSA1 transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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